Characterization of generation±recombination noise using a physics-based device noise simulator
نویسندگان
چکیده
The implementation of generation±recombination (g±r) noise in a partial dierential equation based device simulator is presented. Derived from the Shockley±Read±Hall model, the strength of each local g±r noise source is calculated based on the carrier transition rates between the conduction band, valence band, and trap states. The perturbations of these local g±r noise sources are then transmitted to the electrodes of the simulated device through scalar GreenÕs functions. g±r noise simulations are compared with existing measurements made on a four trap level, p-type silicon resistor. Good agreement between measured and simulated data is observed. Ó 2000 Elsevier Science Ltd. All rights reserved.
منابع مشابه
Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator
Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a 2-D device simulator. In the simulation, various generation-recombination (GR) components such as SRH recombination centers and surface traps of various lifetimes are taken into account. It is shown that lifetimes of traps determine the characteristics of lowfrequency noise. Also is shown that th...
متن کاملMaximum Allowable Bulk Defect Density for Generation–Recombination Noise-Free Device Operation
Generation–recombination noise associated with bulk defect levels in silicon is modeled in a partial differential equation-based device simulator to study the maximum allowable defect density that guarantees generation-recombination (g–r) noise-free operation in the presence of hotcarrier effects and space-charge injection.
متن کاملInfluence of the doping profile and deep level trap characteristics on generation-recombination noise
Generation-recombination ~g-r! noise originated by the fluctuating occupancy of deep level traps in the depletion regions of a junction field effect transistor ~JFET! has been thoroughly analyzed. A numerical simulator of this type of device, which allows us to calculate all relevant electrical magnitudes in the structure, was used to calculate the noise power spectral density. To check our sim...
متن کاملNoise Equivalent Power Optimization of Graphene- Superconductor Optical Sensors in the Current Bias Mode
In this paper, the noise equivalent power (NEP) of an optical sensor based ongraphene-superconductor junctions in the constant current mode of operation has beencalculated. Furthermore, the necessary investigations to optimize the device noise withrespect to various parameters such as the operating temperature, magnetic field, deviceresistance, voltage and current bias have been presented. By s...
متن کاملLow-Frequency Noise Characterization of High- and Low- Reliability AlGaAdGaAs Single HBTs
Self-aligned AIGaAdGaAs Single HBTs were fabricated using different epilayers with identical layer structure and processing technology. These HBTs manifested different long-term reliability characteristics despite their identical device design and similar DC characteristics. The low-frequency noise characterization of these devices revealed generation-recombination centers with activation energ...
متن کامل